From: Artem Bityutskiy <dedekind@infradead.org>
Date: Fri, 20 Oct 2006 08:23:56 +0000 (+0300)
Subject: [MTD] NAND: nandsim: support subpage write
X-Git-Url: https://git.stricted.de/?a=commitdiff_plain;h=82810b7b6cc7a74c68881a13b0eb66c7a6370fcc;p=GitHub%2Fmoto-9609%2Fandroid_kernel_motorola_exynos9610.git

[MTD] NAND: nandsim: support subpage write

As flash cannot do 0->1 bit transitions when programming, do not do this in
the simulator too. This makes nandsim able to accept subpage writes.

Signed-off-by: Artem Bityutskiy <dedekind@infradead.org>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
---

diff --git a/drivers/mtd/nand/nandsim.c b/drivers/mtd/nand/nandsim.c
index 28ee78544ff2..abebcab47631 100644
--- a/drivers/mtd/nand/nandsim.c
+++ b/drivers/mtd/nand/nandsim.c
@@ -852,6 +852,7 @@ static void erase_sector(struct nandsim *ns)
  */
 static int prog_page(struct nandsim *ns, int num)
 {
+	int i;
 	union ns_mem *mypage;
 	u_char *pg_off;
 
@@ -867,7 +868,8 @@ static int prog_page(struct nandsim *ns, int num)
 	}
 
 	pg_off = NS_PAGE_BYTE_OFF(ns);
-	memcpy(pg_off, ns->buf.byte, num);
+	for (i = 0; i < num; i++)
+		pg_off[i] &= ns->buf.byte[i];
 
 	return 0;
 }