From: Artem Bityutskiy Date: Wed, 30 Jul 2008 08:18:42 +0000 (+0300) Subject: [MTD] [NAND] nandsim: support random page read command X-Git-Url: https://git.stricted.de/?a=commitdiff_plain;h=74216be41a61a809ad17b091068307e3d89f4a2f;p=GitHub%2FLineageOS%2Fandroid_kernel_motorola_exynos9610.git [MTD] [NAND] nandsim: support random page read command Commit 3d45955962496879dead8d4dd70bb9a23b07154b ("subpage read feature as a way to improve performance") broke nandsim because nandsim does not support the "random page read" NAND command. This patch adds corresponding support. Signed-off-by: Artem Bityutskiy Signed-off-by: David Woodhouse --- diff --git a/drivers/mtd/nand/nandsim.c b/drivers/mtd/nand/nandsim.c index ecd70e2504f6..7428a6c1135e 100644 --- a/drivers/mtd/nand/nandsim.c +++ b/drivers/mtd/nand/nandsim.c @@ -207,13 +207,16 @@ MODULE_PARM_DESC(overridesize, "Specifies the NAND Flash size overriding the I #define STATE_CMD_READID 0x0000000A /* read ID */ #define STATE_CMD_ERASE2 0x0000000B /* sector erase second command */ #define STATE_CMD_RESET 0x0000000C /* reset */ +#define STATE_CMD_RNDOUT 0x0000000D /* random output command */ +#define STATE_CMD_RNDOUTSTART 0x0000000E /* random output start command */ #define STATE_CMD_MASK 0x0000000F /* command states mask */ /* After an address is input, the simulator goes to one of these states */ #define STATE_ADDR_PAGE 0x00000010 /* full (row, column) address is accepted */ #define STATE_ADDR_SEC 0x00000020 /* sector address was accepted */ -#define STATE_ADDR_ZERO 0x00000030 /* one byte zero address was accepted */ -#define STATE_ADDR_MASK 0x00000030 /* address states mask */ +#define STATE_ADDR_COLUMN 0x00000030 /* column address was accepted */ +#define STATE_ADDR_ZERO 0x00000040 /* one byte zero address was accepted */ +#define STATE_ADDR_MASK 0x00000070 /* address states mask */ /* Durind data input/output the simulator is in these states */ #define STATE_DATAIN 0x00000100 /* waiting for data input */ @@ -240,7 +243,7 @@ MODULE_PARM_DESC(overridesize, "Specifies the NAND Flash size overriding the I #define ACTION_OOBOFF 0x00600000 /* add to address OOB offset */ #define ACTION_MASK 0x00700000 /* action mask */ -#define NS_OPER_NUM 12 /* Number of operations supported by the simulator */ +#define NS_OPER_NUM 13 /* Number of operations supported by the simulator */ #define NS_OPER_STATES 6 /* Maximum number of states in operation */ #define OPT_ANY 0xFFFFFFFF /* any chip supports this operation */ @@ -373,7 +376,10 @@ static struct nandsim_operations { {OPT_ANY, {STATE_CMD_READID, STATE_ADDR_ZERO, STATE_DATAOUT_ID, STATE_READY}}, /* Large page devices read page */ {OPT_LARGEPAGE, {STATE_CMD_READ0, STATE_ADDR_PAGE, STATE_CMD_READSTART | ACTION_CPY, - STATE_DATAOUT, STATE_READY}} + STATE_DATAOUT, STATE_READY}}, + /* Large page devices random page read */ + {OPT_LARGEPAGE, {STATE_CMD_RNDOUT, STATE_ADDR_COLUMN, STATE_CMD_RNDOUTSTART | ACTION_CPY, + STATE_DATAOUT, STATE_READY}}, }; struct weak_block { @@ -937,12 +943,18 @@ static char *get_state_name(uint32_t state) return "STATE_CMD_ERASE2"; case STATE_CMD_RESET: return "STATE_CMD_RESET"; + case STATE_CMD_RNDOUT: + return "STATE_CMD_RNDOUT"; + case STATE_CMD_RNDOUTSTART: + return "STATE_CMD_RNDOUTSTART"; case STATE_ADDR_PAGE: return "STATE_ADDR_PAGE"; case STATE_ADDR_SEC: return "STATE_ADDR_SEC"; case STATE_ADDR_ZERO: return "STATE_ADDR_ZERO"; + case STATE_ADDR_COLUMN: + return "STATE_ADDR_COLUMN"; case STATE_DATAIN: return "STATE_DATAIN"; case STATE_DATAOUT: @@ -973,6 +985,7 @@ static int check_command(int cmd) switch (cmd) { case NAND_CMD_READ0: + case NAND_CMD_READ1: case NAND_CMD_READSTART: case NAND_CMD_PAGEPROG: case NAND_CMD_READOOB: @@ -982,7 +995,8 @@ static int check_command(int cmd) case NAND_CMD_READID: case NAND_CMD_ERASE2: case NAND_CMD_RESET: - case NAND_CMD_READ1: + case NAND_CMD_RNDOUT: + case NAND_CMD_RNDOUTSTART: return 0; case NAND_CMD_STATUS_MULTI: @@ -1021,6 +1035,10 @@ static uint32_t get_state_by_command(unsigned command) return STATE_CMD_ERASE2; case NAND_CMD_RESET: return STATE_CMD_RESET; + case NAND_CMD_RNDOUT: + return STATE_CMD_RNDOUT; + case NAND_CMD_RNDOUTSTART: + return STATE_CMD_RNDOUTSTART; } NS_ERR("get_state_by_command: unknown command, BUG\n"); @@ -1582,6 +1600,11 @@ static void switch_state(struct nandsim *ns) ns->regs.num = 1; break; + case STATE_ADDR_COLUMN: + /* Column address is always 2 bytes */ + ns->regs.num = ns->geom.pgaddrbytes - ns->geom.secaddrbytes; + break; + default: NS_ERR("switch_state: BUG! unknown address state\n"); } @@ -1693,15 +1716,21 @@ static void ns_nand_write_byte(struct mtd_info *mtd, u_char byte) return; } - /* - * Chip might still be in STATE_DATAOUT - * (if OPT_AUTOINCR feature is supported), STATE_DATAOUT_STATUS or - * STATE_DATAOUT_STATUS_M state. If so, switch state. - */ + /* Check that the command byte is correct */ + if (check_command(byte)) { + NS_ERR("write_byte: unknown command %#x\n", (uint)byte); + return; + } + if (NS_STATE(ns->state) == STATE_DATAOUT_STATUS || NS_STATE(ns->state) == STATE_DATAOUT_STATUS_M - || ((ns->options & OPT_AUTOINCR) && NS_STATE(ns->state) == STATE_DATAOUT)) + || NS_STATE(ns->state) == STATE_DATAOUT) { + int row = ns->regs.row; + switch_state(ns); + if (byte == NAND_CMD_RNDOUT) + ns->regs.row = row; + } /* Check if chip is expecting command */ if (NS_STATE(ns->nxstate) != STATE_UNKNOWN && !(ns->nxstate & STATE_CMD_MASK)) { @@ -1715,12 +1744,6 @@ static void ns_nand_write_byte(struct mtd_info *mtd, u_char byte) switch_to_ready_state(ns, NS_STATUS_FAILED(ns)); } - /* Check that the command byte is correct */ - if (check_command(byte)) { - NS_ERR("write_byte: unknown command %#x\n", (uint)byte); - return; - } - NS_DBG("command byte corresponding to %s state accepted\n", get_state_name(get_state_by_command(byte))); ns->regs.command = byte;