From: Brian Norris Date: Wed, 18 Aug 2010 18:25:04 +0000 (-0700) Subject: mtd: nand: Fix regression in BBM detection X-Git-Url: https://git.stricted.de/?a=commitdiff_plain;h=065a1ed8de85583888b3d4f22c64b534a1fbdaaa;p=GitHub%2Fmoto-9609%2Fandroid_kernel_motorola_exynos9610.git mtd: nand: Fix regression in BBM detection Commit c7b28e25cb9beb943aead770ff14551b55fa8c79 ("mtd: nand: refactor BB marker detection") caused a regression in detection of factory-set bad block markers, especially for certain small-page NAND. This fix removes some unneeded constraints on using NAND_SMALL_BADBLOCK_POS, making the detection code more correct. This regression can be seen, for example, in Hynix HY27US081G1M and similar. Signed-off-by: Brian Norris Tested-by: Michael Guntsche Signed-off-by: David Woodhouse --- diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index a3c7473dd409..a22ed7b281ce 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -2934,14 +2934,10 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd, chip->chip_shift = ffs((unsigned)(chip->chipsize >> 32)) + 32 - 1; /* Set the bad block position */ - if (!(busw & NAND_BUSWIDTH_16) && (*maf_id == NAND_MFR_STMICRO || - (*maf_id == NAND_MFR_SAMSUNG && - mtd->writesize == 512) || - *maf_id == NAND_MFR_AMD)) - chip->badblockpos = NAND_SMALL_BADBLOCK_POS; - else + if (mtd->writesize > 512 || (busw & NAND_BUSWIDTH_16)) chip->badblockpos = NAND_LARGE_BADBLOCK_POS; - + else + chip->badblockpos = NAND_SMALL_BADBLOCK_POS; /* Get chip options, preserve non chip based options */ chip->options &= ~NAND_CHIPOPTIONS_MSK;