From: Brian Norris Date: Sat, 14 Jan 2012 02:11:47 +0000 (-0800) Subject: mtd: nand: erase block before marking bad X-Git-Url: https://git.stricted.de/?a=commitdiff_plain;h=009184296d957d864d6fa9ac2dd192d29e069878;p=GitHub%2FLineageOS%2Fandroid_kernel_motorola_exynos9610.git mtd: nand: erase block before marking bad Many NAND flash systems (especially those with MLC NAND) cannot be reliably written twice in a row. For instance, when marking a bad block, the block may already have data written to it, and so we should attempt to erase the block before writing a bad block marker to its OOB region. We can ignore erase failures, since the block may be bad such that it cannot be erased properly; we still attempt to write zeros to its spare area. Signed-off-by: Brian Norris Signed-off-by: Artem Bityutskiy Signed-off-by: David Woodhouse --- diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index 8a393f9e6027..cd827d5a8255 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -394,6 +394,17 @@ static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs) uint8_t buf[2] = { 0, 0 }; int block, ret, i = 0; + if (!(chip->bbt_options & NAND_BBT_USE_FLASH)) { + struct erase_info einfo; + + /* Attempt erase before marking OOB */ + memset(&einfo, 0, sizeof(einfo)); + einfo.mtd = mtd; + einfo.addr = ofs; + einfo.len = 1 << chip->phys_erase_shift; + nand_erase_nand(mtd, &einfo, 0); + } + if (chip->bbt_options & NAND_BBT_SCANLASTPAGE) ofs += mtd->erasesize - mtd->writesize;