chip->chip_shift = ffs((unsigned)(chip->chipsize >> 32)) + 32 - 1;
/* Set the bad block position */
- chip->badblockpos = mtd->writesize > 512 ?
- NAND_LARGE_BADBLOCK_POS : NAND_SMALL_BADBLOCK_POS;
- chip->badblockbits = 8;
+ if (!(busw & NAND_BUSWIDTH_16) && (*maf_id == NAND_MFR_STMICRO ||
+ (*maf_id == NAND_MFR_SAMSUNG &&
+ mtd->writesize == 512) ||
+ *maf_id == NAND_MFR_AMD))
+ chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
+ else
+ chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
+
/* Get chip options, preserve non chip based options */
chip->options &= ~NAND_CHIPOPTIONS_MSK;
/*
* Bad block marker is stored in the last page of each block
- * on Samsung and Hynix MLC devices
+ * on Samsung and Hynix MLC devices; stored in first two pages
+ * of each block on Micron devices with 2KiB pages and on
+ * SLC Samsung, Hynix, and AMD/Spansion. All others scan only
+ * the first page.
*/
if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
(*maf_id == NAND_MFR_SAMSUNG ||
*maf_id == NAND_MFR_HYNIX))
chip->options |= NAND_BBT_SCANLASTPAGE;
+ else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+ (*maf_id == NAND_MFR_SAMSUNG ||
+ *maf_id == NAND_MFR_HYNIX ||
+ *maf_id == NAND_MFR_AMD)) ||
+ (mtd->writesize == 2048 &&
+ *maf_id == NAND_MFR_MICRON))
+ chip->options |= NAND_BBT_SCAN2NDPAGE;
+
/* Check for AND chips with 4 page planes */
if (chip->options & NAND_4PAGE_ARRAY)
static uint8_t scan_ff_pattern[] = { 0xff, 0xff };
static struct nand_bbt_descr smallpage_memorybased = {
- .options = NAND_BBT_SCAN2NDPAGE,
- .offs = 5,
+ .options = 0,
+ .offs = NAND_SMALL_BADBLOCK_POS,
.len = 1,
.pattern = scan_ff_pattern
};
+static struct nand_bbt_descr smallpage_scan2nd_memorybased = {
+ .options = NAND_BBT_SCAN2NDPAGE,
+ .offs = NAND_SMALL_BADBLOCK_POS,
+ .len = 2,
+ .pattern = scan_ff_pattern
+};
+
static struct nand_bbt_descr largepage_memorybased = {
.options = 0,
- .offs = 0,
+ .offs = NAND_LARGE_BADBLOCK_POS,
+ .len = 1,
+ .pattern = scan_ff_pattern
+};
+
+static struct nand_bbt_descr largepage_scan2nd_memorybased = {
+ .options = NAND_BBT_SCAN2NDPAGE,
+ .offs = NAND_LARGE_BADBLOCK_POS,
.len = 2,
.pattern = scan_ff_pattern
};
+static struct nand_bbt_descr lastpage_memorybased = {
+ .options = NAND_BBT_SCANLASTPAGE,
+ .offs = 0,
+ .len = 1,
+ .pattern = scan_ff_pattern
+};
+
static struct nand_bbt_descr smallpage_flashbased = {
.options = NAND_BBT_SCAN2NDPAGE,
- .offs = 5,
+ .offs = NAND_SMALL_BADBLOCK_POS,
.len = 1,
.pattern = scan_ff_pattern
};
static struct nand_bbt_descr largepage_flashbased = {
.options = NAND_BBT_SCAN2NDPAGE,
- .offs = 0,
+ .offs = NAND_LARGE_BADBLOCK_POS,
.len = 2,
.pattern = scan_ff_pattern
};
this->bbt_td = NULL;
this->bbt_md = NULL;
if (!this->badblock_pattern) {
- this->badblock_pattern = (mtd->writesize > 512) ?
- &largepage_memorybased : &smallpage_memorybased;
+ if (this->options & NAND_BBT_SCANLASTPAGE)
+ this->badblock_pattern = &lastpage_memorybased;
+ else if (this->options & NAND_BBT_SCAN2NDPAGE)
+ this->badblock_pattern = this->badblockpos ==
+ NAND_SMALL_BADBLOCK_POS ?
+ &smallpage_scan2nd_memorybased :
+ &largepage_scan2nd_memorybased;
+ else
+ this->badblock_pattern = this->badblockpos ==
+ NAND_SMALL_BADBLOCK_POS ?
+ &smallpage_memorybased :
+ &largepage_memorybased;
}
}
return nand_scan_bbt(mtd, this->badblock_pattern);