Commit
c7b28e25cb9beb943aead770ff14551b55fa8c79 ("mtd: nand: refactor BB
marker detection") caused a regression in detection of factory-set bad
block markers, especially for certain small-page NAND. This fix removes
some unneeded constraints on using NAND_SMALL_BADBLOCK_POS, making the
detection code more correct.
This regression can be seen, for example, in Hynix HY27US081G1M and
similar.
Signed-off-by: Brian Norris <norris@broadcom.com>
Tested-by: Michael Guntsche <mike@it-loops.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
chip->chip_shift = ffs((unsigned)(chip->chipsize >> 32)) + 32 - 1;
/* Set the bad block position */
- if (!(busw & NAND_BUSWIDTH_16) && (*maf_id == NAND_MFR_STMICRO ||
- (*maf_id == NAND_MFR_SAMSUNG &&
- mtd->writesize == 512) ||
- *maf_id == NAND_MFR_AMD))
- chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
- else
+ if (mtd->writesize > 512 || (busw & NAND_BUSWIDTH_16))
chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
-
+ else
+ chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
/* Get chip options, preserve non chip based options */
chip->options &= ~NAND_CHIPOPTIONS_MSK;