git.stricted.de - GitHub/exynos8895/android_kernel_samsung

author	Vandana Kannan <vandana.kannan@intel.com>
	Tue, 18 Nov 2014 10:15:29 +0000 (15:45 +0530)
committer	Daniel Vetter <daniel.vetter@ffwll.ch>
	Thu, 16 Apr 2015 09:42:40 +0000 (11:42 +0200)
commit	9314726b9f7329e223dd279819b42842ab7d413f
tree	f9eca76c9ed44e6b471b4288c510ad7186cb6b22	tree \| snapshot (tar.gz zip)
parent	96fb9f9b154a8dbfe1f74c384cd82f73539fda93	commit \| diff

drm/i915/bxt: Update max level of vswing

Broxton supports 3 voltage swing levels on all DP ports.
Max level of pre-emphasis will be taken care with the existing code.

v2: Patch rebased

v3: (imre)
- keep existing behavior for other platforms
- clarify commit message

Signed-off-by: Vandana Kannan <vandana.kannan@intel.com> (v2)
Signed-off-by: Imre Deak <imre.deak@intel.com>
Reviewed-by: Sivakumar Thulasimani <sivakumar.thulasimani@intel.com>
Signed-off-by: Daniel Vetter <daniel.vetter@ffwll.ch>